Journal Publications

  1. Henan Liu, Yong Zhang, Elizabeth H. Steenbergen, Shi Liu, Zhiyuan Lin, Yong-Hang Zhang, Jeomoh Kim, Mi-Hee Ji, Theeradetch Detchprohm, Russell D. Dupuis, Jin K. Kim, Samuel D. Hawkins, and John F. Klem, Raman scattering study of lattice vibrations in type II superlattice InAs/InAs1-xSbx, Phys. Rev. Appl. 8 (2017). 
  2. Qiong Chen, Sergio Bernardi, and Yong Zhang, Spatially Resolved Laser-Induced Modification Raman  Spectroscopy for Probing the Microscopic Structural Variations in the Quaternary Alloy Cu2ZnSnSe4, Phys. Rev. Appl. 8, 034008 (2017).
  3. Liqin Su, Yifei Yu, Linyou Cao, and Yong Zhang, In Situ Monitoring of the Thermal-Annealing Effect in a Monolayer of MoS2, Phys. Rev. Appl. (2017).
  4. S. Zhang, L. Q. Su, J. Kon, T. Gfroerer, M. W. Wanlass, and Y. Zhang, Kinetic energy dependence of carrier diffusion in a GaAs epilayer studied by wavelength selective PL imaging, J. Lumin. 185, 200 (2017).
  5. Xin Chen, Lei Xu, Lin-Lin Liu, Lu-Si Zhao, Chun-Ping Chen, Yong Zhang, Xiao-Chun Wang, Adsorption of formaldehyde molecule on the pristine and transition metal doped graphene: First-principles study, Applied Surface Science 396, 1020 (2016).
  6. Qiong Chen, Henan Liu, Hui-Seon Kim, Yucheng Liu, Mengjin Yang, Naili Yue, Gang Ren, Kai Zhu, Shengzhong Liu, Nam-Gyu Park, and Yong Zhang, Multiple-Stage Structure Transformation of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3, Phys. Rev. X 6, 031042 (2016).
  7. Zhiqiang Liu, Yang Huang Xiaoyan Yi, Binglei Fu, Guodong Yuan, Junxi Wang, Jinmin Li, and Yong Zhang, Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides, Sci. Rep. 6: 32033 (2016).
  8. Yifei Yu, Yiling Yu, Chao Xu, Yong-Qing Cai, Liqin Su, Yong Zhang, Yong-Wei Zhang, Kenan Gundogdu , and Linyou Cao, Engineering Substrate Interactions for High Luminescence Efficiency of Transition-Metal Dichalcogenide Monolayers, Adv. Func. Mater. 26, 4733 (2016).
  9. Jianwei Wang and Yong Zhang, Topologic connection between 2-D layered structures and 3-D diamond structures for conventional semiconductors, Sci. Rep. 6: 24660 (2016).
  10. Jason K. Marmon, Satish C. Rai, Kai Wang, Weilie Zhou, and Yong Zhang, Light-Effect Transistor (LET) with Multiple Independent Gating Controls for Optical Logic Gates and Optical Amplification, Front. Phys. 4, 8 (2016).
  11. Zhiqiang Liu, Xiaoyan Yi, Zhiguo Yu, Gongdong Yuan, Yang Liu, Junxi Wang, Jinmin Li, Na Lu, Ian Ferguson, Yong Zhang, Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides, Sci. Rep. 6:19537 (2016).
  12. Liqin Su and Yong Zhang, Temperature coefficients of phonon frequencies and thermal conductivity in thin black phosphorus layers, Appl. Phys. Letter 107, 071905 (2015).
  13. Jianwei Wang, Yong Zhang, and Lin-Wang Wang, Systematic approach for simultaneously correcting the band-gap and p−d separation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation, Phys. Rev. B 92, 045211 (2015).
  14. Yue Lin, Yong Zhang, Ziquan Guo, Jihong Zhang, Weilin Huang, Yi-Jun Lu, Zhonghua Deng, Zhuguang Liu, and Yongge Cao, Defects dynamics during ageing cycles of InGaN blue light-emitting diodes revealed by evolution of external quantum efficiency – current dependence, Opt. Express 23, a979 (2015).
  15. Henan Liu, Naili Yue, Yong Zhang, Pengfei Qiao, Daniel Zuo, Ben Kesler, Shun Lien Chuang, Jae-Hyun Ryou, James D. Justice,4 and Russell Dupuis, Lattice vibration modes in type-II superlattice InAs/GaSb with no-common-atom interface and overlapping vibration spectra, Phys. Rev. B 91, 235317 (2015).
  16. Satish C Rai, Kai Wang, Yong Ding, Jason K Marmon, Manish Bhatt, Yong Zhang, Weilie Zhou, Zhong Lin Wang, Piezo-Phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array, ACS Nano (2015).
  17. Bingpo Zhang, Ping Lu, Henan Liu, Lin Jiao, Zhenyu Ye, M. Jaime, F.F. Balakirev, Huiqiu Yuan, Huizhen Wu, Wei Pan, and Yong Zhang, Quantum Oscillations in a Two-Dimensional Electron Gas at the Rocksalt/Zincblende Interface of PbTe/CdTe (111) Heterostructures, Nano Lett. (2015).
  18. Liqin Su, Yifei Yu, Linyou Cao, and Yong Zhang, High Temperature Behavior of Monolayer WS2 and Its Interaction with Substrate: Dependence on Substrate Type and Bonding, Nano Research (2015).
  19. Fengxiang Chen, Yong Zhang, T. H. Gfroerer, A. N. Finger, and M. W. Wanlass, Spatial resolution verse data acquisition efficiency in mapping an inhomogeneous system with species diffusion, Sci. Reps. (2015).
  20. Satish C. Rai, Kai Wang, Jiajun Chen, Jason K. Marmon, Manish Bhatt, Sarah Wozny, Yong Zhang, Weilie Zhou, Enhanced broad band photo-detection through piezo-phototronic effect in CdSe/ZnTe core/shell nanowire array, Adv. Electron. Mat. 1 (2015).
  21. L. C. Lew Yan Voon, A. Lopez Bezanilla, J. Wang, Y. Zhang, and M. Willatzen, Effective Hamiltonians for phosphorene and silicene, N. J. Phys. 17, 025004 (2015).
  22. Yifei Yu, Shi Hu, Liqin Su, Lujun Huang, Yi Liu, Zhenghe Jin, Alexander A. Purezky, David B. Geohegan, Ki Wook Kim, Yong Zhang, Linyou Cao, Equally Efficient Interlayer Exciton Relaxation and Improved Absorption in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures, Nano Lett. 15, 486 (2015).
  23. Jianwei Wang and Yong Zhang, Band-gap corrected density functional theory calculations for InAs/GaSb type II superlattices, J. Appl. Phys. 116, 214301 (2014).
  24. Tao Sheng, Baobao Cao, Yong Zhang, and Haitao Zhang, New Growth Modes of Molybdenum Oxide Layered 1D Structures Using Alternative Catalysts: Transverse Mode vs. Axial Mode, CrystEngComm 17, 1139 (2014).
  25. Alper Gurarslan, Yifei Yu, Liqin Su, Yiling Yu, Francisco Suarez, Shanshan Yao, Yong Zhu, Mehmet Oztürk, Yong Zhang, Linyou Cao, Surface Energy-Assisted Perfect Transfer of Centimeter-Scale Monolayer and Few-layer MoS2 Films onto Arbitrary Substrates, ACS Nano 8, 11522 (2014).
  26. Yong Zhang and Jianwei Wang, Bound exciton model for an acceptors in a semiconductor, Phys. Rev. B 90, 155201 (2014).
  27. Weihuang Yang, Jinchai Li, Yong Zhang, Po-Kai Huang, Tien-Chang Lu, Hao-Chung Kuo, Shuping Li, Xu Yang, Hangyang Chen, Dayi Liu, and Junyong Kang, High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability, SCIENTIFIC REPORTS 4, 5166 (2014).
  28.  Lian Hu, Huizhen Wu, Bingpo Zhang, Lingxiao Du, Tianning Xu, Yongyue Chen, and Yong Zhang, Designable luminescence with Quantum Dot – Silver, Plasmon Coupler, Small 10, 3099 (2014).
  29. Henan Liu, Yong Zhang, Yuanping Chen and Priyalal S. Wijewarnasuriya, Confocal micro-PL mapping of defects in CdTe epilayers grown on Si (211) substrates with different annealing cycles, J. Electron. Mat. 43, 2854 (2014).
  30. Tao Sheng, Padmanabha P. Chavvakula, Baobao Cao, Naili Yue, Yong Zhang, and Haitao Zhang, Growth of Ultra-long Sodium Tungsten Oxide and Tungsten Oxide Nanowires: Effects of Impurity and Residue Deposition, J. Cryst. Growth. 395, 61 (2014).
  31. Liqin Su, Yong Zhang, Yifei Yu, and Linyou Cao, Dependence of coupling of quasi 2-D MoS2 with substrates on substrate types, probed by temperature dependent Raman scattering, Nanoscale 6, 4920 (2014). (pdf)
  32. Kai Wang, Satish C. Rai, Jason Marmon, Jiajun Chen, Kun Yao, Sarah Wozny, Baobao Cao, Yanfa Yan, Yong Zhang, and Weilie Zhou, Nearly lattice matched all wurtzite CdSe/ZnTe type II core–shell nanowires with epitaxial interfaces for photovoltaics, Nanoscale, 6, 3679 (2014). (pdf)
  33. Y. Lin, Y. Zhang, Z. Q. Liu, L. Q. Su, J. H. Zhang, T. B. Wei, and Z. Chen, Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence, J. Appl. Phys. 115, 023103 (2014)
  34. Qiong Chen and Yong Zhang, The reversal of the laser-beam-induced-current contrast with varying illumination density in a Cu2ZnSnSe4 thin-film solar cell, Appl. Phys. Lett. 103, 242104 (2013). (pdf)
  35. Xiao-ChunWang, Yong Zhang, Fu-Chun Liu, Yanming Ma,Wei Feng, and Sean Xiao-An Zhang, Dynamic nano-pulling effect of the boron-functionalized graphene monovacancy for molecule dissociation, J. Phys. D: Appl. Phys. 46, 385302 (2013).
  36. Yifei Yu, Chun Li, Yi Liu, Liqin Su, Yong Zhang,  and Linyou Cao, Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films, SCIENTIFIC REPORTS 3, 1866 (2013). (pdf)
  37. Shuqiang Jin, Chunfeng Cai, Gang Bi,  Bingpo Zhang, Huizhen Wu, and Yong Zhang, Two-dimensional electron gas at the metastable twisted interfaces of CdTe/PbTe (111) single heterojunctions, Phys. Rev. B 87, 235315 (2013).(pdf)
  38. N. L. Yue, Y. Zhang, and R. Tsu, Ambient condition laser writing of graphene structures on polycrystalline SiC thin film deposited on Si wafer, Appl. Phys. Lett. 102, 071912 (2013). (pdf)
  39. T. H. Gfroerer, Y. Zhang, and M. W. Wanlass, An extended defect as a sensor for free carrier diffusion in a semiconductor, Appl. Phys. Lett. 102, 012114 (2013). (pdf)
  40. Y. Lin, Y. Zhang, Z. Q. Liu, L. Q. Su, J. H. Zhang, T. B. Wei, and Z. Chen, Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes, Appl. Phys. Lett. 101, 252103 (2012). (pdf)
  41. S. Q. Jin, C. F. Cai, B. P. Zhang, H. Z. Wu, G. Bi, J. X. Si, and Y. Zhang, Twisted ZB–CdTe/RS–PbTe (111) heterojunction as a metastable interface structure, New J. Phys 14, 113021 (2012). (pdf)
  42. Y. Lin, Y.-L. Gao, Y.-J. Lu, L.-H. Zhu, Y. Zhang, and Z. Chen, Study of temperature sensitive optical parameters and junction temperature determination of light-emitting diodes, Appl. Phys. Lett. 100, 202108 (2012). (pdf)
  43. Y. Zhang, Z. Wu, J. Zheng, X. Lin, H. Zhan, S. Li, J. Kang, J. Bleuse, H. Mariette, ZnO/ZnSe type II core–shell nanowire array solar cell, Solar Energy Materials and Solar Cells 102, 15 (2012). (pdf)
  44. X. Wang, R. Yang, Y. Zhang, P. Zhang, and Y. Xue, Rare earth chalcogenide Ce3Te4 as high efficiency high temperature thermoelectric material, Appl. Phys. Lett. 98, 222110 (2011).
  45. Y. Zhang and L. W. Wang, Global electronic structure of semiconductor alloys through direct large-scale computations for III-V alloys GaxIn1−xP, Phys. Rev. B 83, 165208 (2011). ()
  46. Z. M. Wu, Y. Zhang, J. J. Zheng, X. G. Lin, X. H. Chen, B. W. Huang, H. Q. Wang, K. Huang, S. P. Li, and J. Y. Kang, An all-inorganic type-II heterojunction array with nearly full solar spectral response based on ZnO/ZnSe core/shell nanowires, J. Mater. Chem. 21, 6020 (2011). (pdf)
  47. X.-C. Wang, H.-Y. Zhao, Nan-Xian Chen, Y. Zhang, Tuning of the periodicity of stable self-organized metallic templates, Chin. Phys. B 20, 020513 (2011).
  48. X.-C. Wang, H.-Y. Zhao, N.-X. Chen, Nan-Xian Chen, Y. Zhang, Theoretical Investigations into Self-Organized Ordered Metallic Semi-Clusters Arrays on Metallic Substrate, Nanoscale Research Letters 5, 1020 (2010).  
  49. K. Wang, J.-J Chen, Z. Zeng, J. Tarr, W.-L. Zhou, Y. Zhang, Y.-F Yan, C.-S Jiang, J. Pern, and A. Mascarenhas, Synthesis and Photovoltaic Effect of Vertically Aligned ZnO/ZnS Core/Shell Nanowire Arrays, Appl. Phys. Lett. 96, 123105 (2010).
  50. Y. Zhang and R. Tsu, Binding graphene sheets together using Silicon – Graphene/Silicon superlattice, Nanoscale Research Letters 5, 805(2010). (pdf)
  51.  M. A. Steiner, L. Bhusal, J. F. Geisz, A. G. Norman, M. J. Romero, W. J. Olavarria, Y. Zhang, and A. Mascarenhas, CuPt ordering in high bandgap GaxIn1−xP alloys on relaxed GaAsP step grades, J. Appl. Phys. 106, 063525 (2009).
  52. P. Grivickas, M. D. McCluskey, Y. M. Gupta, Y. Zhang, and J. F. Geisz, Bound exciton luminescence in shock compressed GaP:S and GaP:N, J. Appl. Phys. 106, 23710 (2009).
  53. Y. Zhang, A. Mascarenhas, S.-H. Wei, and L.-W. Wang, Comparison of atomistic simulations and statistical theories for variable degree of long-range order in semiconductor alloys, Phys. Rev. B 80, 045206 (2009).  
  54. X. F. Lu, D.A. Beaton, R.B. Lewis, T. Tiedje, and Y. Zhang, Composition Dependence of Photoluminescence of GaAs1-xBix Alloys, Appl. Phys. Lett. 95, 041903 (2009).
  55. Y. Xue, Y. Zhang, and P.-H. Zhang, Theory of the color change of NaxWO3 as a function of Na-charge doping, Phys. Rev. B 79, 205113 (2009).
  56. Y. Zhang, C.-S. Jiang, D. J. Friedman, J. F. Geisz, and A. Mascarenhas, Tailoring the electronic properties of GaxIn1-xP beyond simply varying alloy composition, Appl. Phys. Lett. 94, 091113(2009).
  57. A. Mascarenhas, R. Kini, Y. Zhang, R. France, and A. Ptak, Comparison of the dilute bismide and nitride alloys GaAsBi and GaAsN, phys. stat. sol. (b) 246, 504 (2009).
  58. Y. Zhang, S.-H. Lee, A. Mascarenhas, and S. K. Deb, UV photochromic memory effect in proton-based WO3 electrochromic devices, Appl. Phys. Lett. 93, 203508 (2008).
  59. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Interplay of alloying and ordering on the electronic structure of GaxIn1-xP alloys, Phys. Rev. B 78, 235202 (2008). (pdf)
  60. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Non-Bloch Nature of Alloy States in a Conventional Semiconductor Alloy: GaxIn1-xP as an Example, Phys. Rev. Lett. 101, 036403 (2008).
  61. K. Wang, J.-J. Chen, W.-L. Zhou, Y. Zhang, Y.-F. Yan, J. Pern, and A. Mascarenhas, Direct Growth of Highly Mismatched Type II ZnO/ZnSe Core/Shell Nanowire Arrays on Transparent Conducting Oxide Substrates for Solar Cell Applications, Adv. Mat. 20, 3248 (2008).
  62. A. Franceschetti and Y. Zhang, Multiexciton Absorption and Multiple Exciton Generation in CdSe Quantum Dots, Phys. Rev. Lett. 100, 136805 (2008).
  63. Min Wu, Thomas J. Emge, Xiaoying Huang, Jing Li, Y. Zhang, Designing and tuning properties of a three-dimensional porous quaternary chalcogenide built on a bimetallic tetrahedral cluster [M4Sn3S13]5_ (M = Zn/Sn), Journal of Solid State Chemistry 181, 415–422 (2008).
  64. L. C. Lew Yan Voon, Y. Zhang, B. Lassen, M. Willatzen, Q. Xiong, and P. C. Eklund, Electronic Properties of Semiconductor Nanowires, J. Nanoscience and Nanotechnology 8, 1 (2008) (invited review paper).
  65. Y. Zhang, Z. Islam, Y. Ren, P. Parilla, S. P. Ahrenkiel, P. L. Lee, A. Mascarenhas,M. J. McNevin, I. Naumov, H.-X. Fu, X.-Y. Huang, and J. Li, Zero thermal expansion in a nanostructured inorganic-organic hybrid crystal, Phys. Rev. Lett.  99, 215901 (2007). Virtual Journal of Nanoscale Science & Technology — December 3, 2007, Volume 16, Issue 23.
  66. Y. Zhang, L.-W. Wang, and A.  Mascarenhas, “Quantum coaxial cables” for solar energy harvesting, Nano. Lett. 7, 1264 (2007).
  67. W. Ki, X.-Y. Huang, J. Li, D. L. Young, Y. Zhang, Highly conductive group VI transition metal dichalcogenide films by solution-processed deposition, J. Mater. Res. 22, 1390 (2007).
  68. P. H. Tan, Z. Y. Xu, X. D. Luo, W. K. Ge, Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Unusual carrier thermalization in a dilute GaAs1-xNx alloy, Appl. Phys. Lett. 90, 61905 (2007).
  69. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Systematic approach to distinguishing a perturbed host state from an impurity state in a supercell calculation for a doped semiconductor: using GaP:N as an example, Phys. Rev. B 74, 41201(R) (2006).
  70. P. H. Tan,  Z. Y. Xu, X. D. Luo,  W. K. Ge, Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Resonant Raman scattering with the E+ band in a dilute GaAs1-xNx alloy (x=0.1%), Appl. Phys. Lett. 89, 101912 (2006).
  71. W. J. Wang, X. D. Yang, B. S. Ma, Z. Sun, F. H. Su, K. Ding, Z. Y. Xu, G. H. Li,  Y. Zhang, A. Mascarenhas,  H. P. Xin, and C. W. Tu,  The lifetime study of N  impurity states in GaAs1-xNx (x=0.1%)  under hydrostatic pressure, Appl. Phys. Lett. 88, 201917 (2006).
  72. P. H. Tan, X. D. Luo, Z. Y. Xu, Y. Zhang, A. Mascarenhas, H. P. Xin, C. W. Tu, and W. K. Ge,  Photoluminescence from the nitrogen-perturbed above bandgap states in dilute GaAsN alloys probed by m-PL, Phys. Rev. B 73, 205205 (2006).
  73. C.-Y. Moon, G. M. Dalpian, Y. Zhang, S.-H. Wei, X.-Y. Huang, and J. Li, Study of phase selectivity of organic-inorganic hybrid semiconductors, Chem. Mater.  18, 2805 (2006).
  74. Y. Zhang, G. M. Dalpian, B. Fluegel, S.-H Wei, A. Mascarenhas, X.-Y. Huang, J. Li, and L.-W. Wang, Novel approach to tuning physical properties of organic-inorganic hybrid semiconductors, Phys. Rev. Lett. 96, 026405(2006).
  75. B. Fluegel, Y. Zhang, J. F. Geisz, and A. Mascarenhas, Confirmation of the impurity-band model for GaP1-xNx, Phys. Rev. B  72, 073203 (2005).
  76. B. Fluegel, Y. Zhang, J. F. Geisz, and A. Mascarenhas, Comment on “Experimental evidence for N-induced strong coupling of host conduction band states in GaP1-xNx:  Insight into the dominant mechanism for giant band-gap bowing”, Phys. Rev. B 72, 197301 (2005).
  77. Y. Zhang and A. Mascarenhas, Total and negative refraction of electromagnetic waves, Modern Physics Letters B 19, 21 (2005) (An invited review paper).
  78. Y. Zhang, A. Mascarenhas, and L.W. Wang, III-V-Bi versus III-V-N: similar and dissimilar aspects, Phys. Rev. B 71, 155201 (2005).
  79. B. S. Ma, F. H. Su, K. Ding, G. H. Li, Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Pressure behavior of the alloy band-edge and nitrogen related centers in GaAs0.999N0,001, Phys. Rev. B 71, 45213 (2005).
  80. Y.-L. Gao, Y.-J. Lu, J.-S. Zheng, Y. Zhang, A. Mascarenhas, H.-P. Xin, and C. W. Tu, Transient Photoluminescence of GaP1-xNx Alloys, Chinese J. Lumin., No.1 (2005).
  81. Y. -J. Lu, Y. -L. Gao, J. -S. Zheng, Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Direct Observation of NN Pairs Transfer in GaP1-xNx (x = 0.12%), Chinese Phys. Lett. 22, 2957 (2005).
  82. J. H. Li, S. C. Moss, Y. Zhang, A. Mascarenhas, J. Bai,  X-Ray Characterization of Atomic-Layer Superlattices, Journal of Physics D: Applied Physics. 38, 2005; pp. A147-A153.
  83. Y.-L. Gao, Y.-J. Lu, J.-S. Zheng, Y. Zhang, A. Mascarenhas, H.-P. Xin, and C. W. Tu, Study on the New Bound States in the GaP1-xNx Alloys, Chinese J. Lumin., No.2 (2004).
  84. X. Wu, Y. Yan, R. G. Dhere, Y. Zhang, J. Zhou, A. Duda, C. Perkins, and B. Tu, Nanostructured CdS:O film: preparation, properties, and applications, Phys. Stat. Sol. C 1, 1062-1066  (2004).
  85. S. Smith, Y. Zhang, A. Mascarenhas, and M. Hanna, Effect of localization on excitonic linewidth in partially-ordered GaInP2, Phys. Rev. B 70, 235301 (2004).
  86. B. Fluegel, Y. Zhang, A. Mascarenhas, X. Huang, and J. Li, Electronic  properties of hybrid organic-inorganic semiconductors, Phys. Rev. B 70, 205308 (2004).
  87. Y. Zhang, B. Fluegel, and A. Mascarenhas, Total and negative refraction in real crystals for ballistic electrons and light, Phys. Rev. Lett. 91, 157404 (2003).
  88. J. H. Li, S. C. Moss, Y. Zhang, A. Mascarenhas, L. N. Pfeiffer, K. W. West, W. K. Ge, and J. Bai, Layer ordering and faulting in (GaAs)n/(AlAs)n ultra-short-period superlattices, Phys. Rev. Lett. 91, 106103 (2003).
  89. Y. Zhang, B. Fluegel, M. C. Hanna, A. Mascarenhas, L.-W. Wang, Y. J. Wang, and X. Wei, Impurity perturbation to the host band structure and recoil of the impurity state, Phys. Rev. B 68, 75210 (2003).
  90. Y. Zhang, B. Fluegel, M. C. Hanna, J. F. Geisz, L.-W. Wang, and A. Mascarenhas, Effects of heavy nitrogen doping in III-V semiconductors- How well does the conventional wisdom hold for the dilute nitrogen “III-V-N alloys”?, Phys. Stat. Sol (b) 240, 396 (2003) (An invited talk).
  91. X.-Y. Huang, J. Li, Y. Zhang, and A. Mascarenhas, From 1D Chain to 3D Network: Syntheses, Structures, and Optical Properties of Novel Hybrid II-VI Nanocomposites, JACS 125, 7049 (2003).
  92. S. Zh. Karazhanov, Y. Zhang, L.-W. Wang, A. Mascarenhas, and S. Deb, Resonant defect states and strong lattice relaxation of oxygen vacancies in WO3, Phys. Rev. B 68, 233204 (2003).
  93. S. Zh. Karazhanov, Y. Zhang, A. Mascarenhas, S. Deb, and L.-W. Wang, Oxygen vacancy in cubic WO3 studied by first-principles pseudopotential calculation, Proceeding of the 5th International Conference on Electrochromism, Solid State Ionics 165, 43 (2003).
  94. Y.J. Wang, X. Wei, Y. Zhang, A. Mascarenhas, H. P. Xin, Y. G. Hong, and C. W. Tu, Evolution of the electron localization in a non-conventional alloy system GaAs1-xNx probed by high magnetic field photoluminescence, Appl. Phys. Lett. 82, 4453 (2003).
  95. X. D. Luo, J. S. Huang, Z. Y. Xu, C. L. Yang, J. Liu, W. K. Ge, Y. Zhang, A. A. Mascarenhas, H.-P. Xin, and C. W. Tu, Appl. Phys. Lett. 82, 1697 (2003).
  96. Y.-L. Gao, Y.-J. Lu, J.-S. Zheng, Y. Zhang, A. Mascarenhas, H.-P. Xin, and C. W. Tu, Chinese J. Semiconductors 24, 476 (2003).
  97. Y.-L. Gao, Y.-J. Lu, J.-S. Zheng, Y. Zhang, A. Mascarenhas, H.-P. Xin, and C. W. Tu, Raman scattering of GaP1-xNx alloys, Chinese J. Semiconductors 24, 714 (2003).
  98. B. Fluegel, S. Smith, Y. Zhang, A. Mascarenhas, J. F. Geisz, and J. M. Olson, Resonant excitation study of ultrasharp emission lines in ordered GaxIn1-xP, Phys. Rev. B 115320 (2002).
  99. J. H. Li, R.L. Forrest, S.C. Moss, Y. Zhang, A. Mascarenhas, and J. Bai, Determination of the order parameter of the CuPt-B ordered GaInP2 films by x-ray diffraction, J. Appl. Phys. 91, 9039 (2002).
  100. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Band alignment between GaAs and partially ordered GaInP, Appl. Phys. Lett. 80, 3111 (2002).
  101. A. Mascarenhas, Y. Zhang, and M. J. Seong, Perspective of GaAs1-xNx and GaP1-xNx as Heavily Doped Semiconductors, Proc. ICNS-4, Phys. Stat. Sol. 228, 243 (2001).
  102. Y. Zhang, S. Francoeur, A. Mascarenhas, H. P. Xin, and C. W. Tu, Electronic structure of heavily and randomly nitrogen doped GaAs near the fundamental band gap, Phys. Stat. Sol. 228, 287 (2001).
  103. A. Mascarenhas and Y. Zhang, Dilute nitride based III-V alloys for laser and solar cell applications, Current Opinions Solid State Mater. Sci. 5, 253(2001) (An invited review).
  104. A. Mascarenhas, Y. Zhang, J. Verley, and M. J. Seong, Overcoming limitations in semiconductor alloy design, Superlattices and microstructures 29, 395 (2001).
  105. Y. Zhang and A. Mascarenhas, Effects of the orientational superlattice on the electronic and vibrational properties of CuPt ordered GaInP alloys, J. Raman Spectrosc. 32, 831 (2001).
  106. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Statistical aspects of electronic and structural properties in partially ordered semiconductor alloys, Phys. Rev. B 64, 125207 (2001).
  107. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Dependence of the band structure on the order parameter for partially ordered GaxIn1-xP alloy, Phys. Rev. B 63, R201312 (2001).
  108. Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Scaling Of Band Gap Reduction In Heavily Nitrogen Doped GaAs, Phys. Rev. B 63, R161303 (2001).
  109. J. H. L, J. Kulik, V. Holy, Z. Zhong, S. C. Moss, Y. Zhang, S. P. Ahrenkiel, A. Mascarenhas, and J. Bai, X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films, Phys. Rev. B 63, 155310 (2001).
  110. Y. Zhang, A. Mascarenhas, J. F. Geisz, H. P. Xin, and C. W. Tu, Discrete and continuous spectrum of nitrogen induced bound states in heavily doped GaAs:N, Phys. Rev. B 63, 85205 (2001).
  111. S. Francoeur, Y. Zhang, A. G. Norman, F. Alsina, A. Mascarenhas, J. L. Reno, E. D. Jones, S. R. Lee, and D. M. Follstaedt, Optical properties of spontaneous lateral composition modulation in AlAs/InAs short-period superlattices, Appl. Phys. Lett. 77, 1765 (2000).
  112. Y. Zhang, B. Fluegel, A. Mascarenhas, H. P. Xin, and C. W. Tu, Optical transitions in isoelectronically doped semiconductor GaP:N: an evolution from isolated centers, pairs, clusters to an impurity band, Phys. Rev. B 62, 4493 (2000).
  113. S. Zh. Karazhanov, Y. Zhang, A. Mascarenhas, and S. Deb, The effect of excitons on CdTe solar cells, J. Appl. Phys. 87, 8786 (2000).
  114. Y. Zhang and A. Mascarenhas, Isoelectronic impurity states in GaAs:N, Phys. Rev. B 61, 15562 (2000).
  115. H. M. Cheong, Y. Zhang, A. Mascarenhas, and J. F. Geisz, Observation of nitrogen-induced levels in GaAs1-xNx using resonant Raman studies, Phys. Rev. B 61, 13687 (2000).
  116. M. Kozhevnikov, V. Narayanamurti, C. V. Reddy, H. P. Xin, C. W. Tu, A. Mascarenhas, and Y. Zhang, Evolution of GaAs1-xNx conduction states and giant Au/GaAs1-xNx Schottky barrier reduction studied by ballistic electron emission microscopy, Phys. Rev. B 61, R7861 (2000).
  117. H. P. Xin, C. W. Tu, Y. Zhang, and A. Mascarenhas, Effects of nitrogen on the band structure of GaNxP1-x alloys, Appl. Phys. Lett. 76, 1267 (2000).
  118. Y. Zhang, A. Mascarenhas, S. Smith, J. F. Geisz, J.M. Olson, and M. Hanna, Effects of spontaneous ordering and alloy statistical fluctuations on exciton linewidth in GaxIn1-xP alloys, Phys. Rev. B 61, 9910 (2000).
  119. Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Formation of an impurity band and its quantum confinement in heavily doped GaAs:N, Phys. Rev. B 61, 7479 (2000).
  120. Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Valence-band splitting and shear deformation potential of dilute GaAs1-xNx alloys, Phys. Rev. B 61, 4433 (2000).
  121. Y. Zhang and W.-K. Ge, Behavior of Nitrogen Impurities in III-V Semiconductors, J. Lumin. 85, 247 (2000) (An invited review paper).
  122. M. Kozhevnikov and V. Narayanamurti, A. Mascarenhas, Y. Zhang, and J. M. Olson, Ordering-induced band structure effects in GaInP2 studied by ballistic electron emission microscopy, Appl. Phys. Lett. 75, 1128 (1999).
  123. H.M. Cheong, Y. Zhang, A. Norman, J. D. Perkins, A. Mascarenhas, K.Y. Cheng, and K.C. Hsieh, Resonant Raman scattering studies of composition-modulated GaP/InP short-period superlattices, Phys. Rev. B 60, 4883 (1999).
  124. B. Fluegel, Y. Zhang, A. Mascarenhas, J. F. Geisz, J. M. Olson, and A. Duda, Crystal anisotropy and spin-polarized photoluminescence of ordered GaxIn1-xP, Phys. Rev. B 60, R11261 (1999).
  125. J. D. Perkins, A. Mascarenhas, Y. Zhang, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Nitrogen-activated transitions, level repulsion, and band gap reduction in GaAs1-xNx with x < 0.03, Phys. Rev. Lett. 82, 3312 (1999).
  126. Y. Zhang and A. Mascarenhas, Scaling of Exciton Binding Energy and Virial Theorem in Semiconductor Quantum Wells and Wires, Phys. Rev. B 59, 2040(1999).
  127. E. D. Jones, D.M. Follstaedt, S.R. Lee, J.L. Reno, J. Mirecki Millunchick, S.P. Ahrenkiel, A. Mascarenhas, A. Norman, Y. Zhang, and R. D. Twesten, Photoluminescence studies of lateral composition modulated short-period AlAs/InAs superlattices, Thin Solid Films 357, 31 (1999).
  128. David M Follstaedt, Andrew G Norman, S Ahrenkeil, John L Reno, Steve R Lee, Eric D Jones, Joanna Mirecki Millunchick, Angelo Mascarenhas, Yong Zhang, Ray D Twesten, Extending lateral composition modulations in InAs/AlAs superlattices with miscut subtrates, Journal of Electronic Materials 28, 1025 (1999).
  129. Y. Zhang, A. Mascarenhas, S.P. Ahrenkiel, D. J. Friedman, J. F. Geisz, and J.M. Olson, Electronic and optical properties of periodically stacked orientational domains in CuPt-ordered GaInP2, Solid State Commun. 109, 99 (1998).
  130. R. L Forrest, T. D. Golding, S. C. Moss, Y. Zhang, J. Geisz, J. M. Olson, A. Mascarenhas, P. Ernst and, C. Geng, X-ray diffraction and excitation photoluminescence analysis of ordered GaInP, Phys. Rev. B 58, 15355 (1998).
  131. J. D. Perkins, Y. Zhang, J. Geisz, W. E. McMahon, J. M. Olson, and A. Mascarenhas, Electroreflectance measurements of electric fields in ordered GaInP2, J. Appl. Phys. 84, 4502, 1998.
  132. Y. Zhang, A. Mascarenhas, and S. Deb, Effects of excitons on solar cells, J. Appl. Phys. 84, 3966 (1998).
  133. D. M. Follstaedt, R. D. Twesten, J. Mirecki Millunchick, S. R. Lee, E. D. Jones, S. P. Ahrenkiel, Y. Zhang, and A. Mascarenhas, Spontaneous lateral composition modulation in InAlAs and InGaAs short-period superlattices, Physica E 2, 325 (1998).
  134. E. D. Jones, J. Mirecki Millunchick, D. M. Follstaedt, S. R. Lee, J. Reno, R. D. Twesten, Y. Zhang, and A. Mascarenhas, Detection of lateral composition modulation by magnetoexciton spectroscopy, Physica E  2, 44 (1998).
  135. Y. Zhang and A. Mascarenhas, Electronic and optical properties of laterally composition-modulated AlxIn1-xAs, GaxIn1-xP and  GaxIn1-xAs alloys, Phys. Rev. B 57, 12245 (1998).
  136. H. M. Cheong, Y. Zhang, A. Mascarenhas, J. Geisz, J. M. Olson, Low-temperature cleaved-edge polarized-photoluminescence studies of spontaneously ordered GaInP2 alloys, J. Appl. Phys. 83, 1773 (1998).
  137. Y. Zhang, A. Mascarenhas, and E. D. Jones, Magnetoexcitons in anisotropic semiconductors, J. Appl. Phys. 83, 448 (1998).
  138. A. Mascarenhas, Y. Zhang, B. Fluegel, J. Geisz, J. M. Olson, Carrier relaxation and exciton bleaching in spontaneously ordered GaInP, Phys. Stat. Sol. (a) 164, 477 (1997).
  139. Y. Zhnag, B. Fluegel, A. Mascarenhas, J. Geisz, J. M. Olson, F. Alsina, and A. Duda, Low-temperature birefrigence in ordered GaInP alloy studied by polarized transmission spectroscopy, Solid State Commun. 104, 577 (1997).
  140. J. Mirecki-Millunchick, R. D. Twesten, S. R. Lee, D. M. Follstaedt, E. D. Jones, S. P. Ahrenkiel, Y. Zhang, H. M. Cheong, and A. Mascarenhas, Spontaneous Lateral Composition Modulation in III-V  Semiconductor Alloys, MRS Bull. 22, no.7, 38 (1997).
  141. J. Mirecki-Millunchick, R. D. Twesten, S. R. Lee, D. M. Follstaedt, E. D. Jones, S. P. Ahrenkiel, Y. Zhang, H. M. Cheong, and A. Mascarenhas, Spontaneous lateral composition modulation in AlAs/InAs short period superlattices, J. Electron. Mat. 26, 1048 (1997).
  142. S. Luo, J. M. Olson, Y. Zhang, and A. Mascarenhas, Near band gap reflectance anisotropy in ordered GaInP, Phys. Rev. B 55, 16385 (1997).
  143. B. Fluegel, Y. Zhnag, H. M. Cheong, A. Mascarenhas, J. Geisz, J. M. Olson, and A. Duda, Exciton absorption and bleaching studies in ordered GaInP, Phys. Rev. B 55, 13647 (1997).
  144. Y. Zhang and A. Mascarenhas, Orientational superlattices formed by CuPt ordered zinc-blende  semiconductor alloys, Phys. Rev. B 55, 13100 (1997).
  145. Y.  Zhang, A. Mascarenhas, P. Ernst, F. A. J. M. Driessen, D. J. Friedman, K. A. Bertness, J. M. Olson, C. Geng, F. Scholz, and H. Schweizer, Effects of strain, substrate misorientation, and excitonic transition on the optical polarization of ordered zinc-blende semiconductor alloys, J. Appl. Phys. 81, 6365 (1997).
  146. P. Ernst, Y. Zhang, F. A. J. M. Driessen,A.Mascarenhas, E. D. Jones, C. Geng, F.  Scholz, and H. Schweizer, Magnetoluminescence study on the effective mass anisotropy of CuPtB-ordered GaInP2  alloys, J. Appl. Phys. 81, 2814 (1997).
  147. J. Mirecki-Millunchick, R. D. Twesten, D. M. Follstaedt, S. R. Lee, E. D. Jones, Y. Zhang, S. P. Ahrenkiel, and A. Mascarenhas, Lateral composition modulation in AlAs/InAs short period superlattices grown on InP(001), Appl. Phys. Lett. 70, 1402 (1997).
  148. A. Mascarenhas, Y. Zhang, R. Alonso, and S. Froyen, Orientational superlattices in ordered GaInP2, Solid State Commun. 100, 47 (1996).
  149. P. Ernst, C. Geng, F. Scholz, H. Schweizer, Y. Zhnag and A. Mascarenhas, Band-gap reduction and valence-band splitting of ordered GaInP2, Appl. Phys. Lett. 67, 2347 (1995).
  150. Y. Zhang and A. Mascarenhas, Conduction and valence band effective masses in spontaneously ordered GaInP2, Phys. Rev. B 51, 13162 (1995).
  151. Y. Zhang, M. D. Sturge, K. Kash, B. P. Van der Gaag, A. S. Gozdz, L. T. Florez, and J. P. Harbison, Temperature dependent time-resolved exciton luminescence in GaAs/AlGaAs quantum wires and quantum dots, Superlattices and Microstructures 17, 201 (1995).
  152. Y. Zhang, M. D. Sturge, K. Kash, B. P. Van der Gaag, A. S. Gozdz, L. T. Florez, and J. P. Harbison, Temperature dependence of luminescent efficiency, exciton localization and exciton transfer in GaAs/AlxGa1-xAs quantum wires and quantum dots, Phys. Rev. B 51, 13303 (1995).
  153. Yitong Gu, Y. Zhang, M. D. Sturge, K. Kash, B. P. Van der Gaag, A. S. Gozdz, L. T. Florez, and J. P. Harbison, Strain-condined wires and dots at a GaAs/AlxGa1-xAs Interface, Superlattices and Microstructures 17, 67 (1995).
  154. Y. Zhang, Motion of electrons in semiconductors under inhomogeneous strain, with application to laterally confined quantum wells, Phys. Rev. B 49, 14352 (1994).
  155. Y. Zhang, M. D. Sturge, K. Kash, B. P. Van der Gaag, A. S. Gozdz, L. T. Florez, and J. P. Harbison, Transient photoluminescence of GaAs/AlGaAs quantum wires, J. Lumin. 60/61, 400 (1994).
  156. Y. Zhang, W. Ge, M.D. Sturge, J. Zheng, and B. Wu, Phonon sidebands of excitons bound to isoelectronic impurities in semiconductors, Phys. Rev. B 47, 6330 (1993).
  157. W. Ge, Y. Zhang, D. Mi, J. Zheng, B. Yan, and B. Wu, Comment on:” Radiative and nonradiative recombination of bound excitons in GaP:N” (Part I and IV), Phys. Rev. B 46, 5004 (1992).
  158. Y. Zhang, Acceptor-like bound excitons in semiconductors, Phys. Rev. B 45, 9025 (1992).
  159. Y. Zhang, J. Zheng and B. Wu, Theoretical investigation on the pressure behavior of nitrogen  bound excitons in GaP and GaAs1-xPx,  Acta Physica Sinica 40, 1329 (1991).
  160. Y. Zhang, J. Zheng, D. Mi, B. Yan, and B. Wu, “Similarity law” in phonon spectrum of bound exciton luminescence in GaP:N,  J. Phys.: Condens. Matter 2, 5219 (1990).
  161. Q. Yu, Y. Zhang, J. Zheng, and B. Yan, Radiative recombination between isoelectronic trap and Zn acceptor in GaP:N, Zn,  Chinese Journal of Semiconductors 10, 717 (1989).
  162. Y. Zhang, Q. Yu, J. Zheng, B. Yan, B. Wu, W. Ge, Z. Xu and J. Xu, The phonon sidebands of NNi pair emission in GaP:N,  Solid State Commun. 68, 707 (1988).
  163. Y. Zhang, Q. Yu, J. Zheng, B. Yan, B. Wu, Z. Wang, G. Li, and H. Han, NNi emission in GaAs0.15P0.85:N under hydrostatic pressure, Chinese Phys. Lett. 5, 353 (1988).
  164. Y. Zhang, Q. Yu, J. Zheng, B. Yan, B. Wu, Z. Wang, G. Li, and H. Han, Pressure behaviour of bound excitons in GaAs1-xPx:N, Acta Physica Sinica 37, 1925 (1988).
  165. J. Zheng and Y. Zhang, Energy transfer and thermal quenching processes of bound exciton luminescence in GaP:N, Scientia Sinica A29, 870 (1986).
  166. J. Zheng and Y. Zhang, Coupling of nitrogen bound excitons with phonons in GaP:N, Scientia Sinica A29, 862 (1986).
  167. J. Zheng and Y. Zhang, A study of recombination kinetics of bound excitons in GaP:N, J. Xiamen University (Natural Science), 24, 314 (1985).