1. Growth and device implementation in wide bandgap semiconductors (GaN, AlN, InN, SiC, Diamond) using molecular beam epitaxy (MBE), gas-source MBE and atomic layer epitaxy (ALE). This effort focuses on the cubic phase of SiC and group III-nitrides, integration with existing Si technology, and possible emergence of wafer fabrication methods in this material system.
2. Develop a new Silicon-on-Insulator (SOI) technology using a newly developed epitaxial method; solid-metal mediated molecular beam epitaxy (SMM-MBE).
3. Farication and growth of planar field emission devices using group II-VI materials.