Cameron Clean Room

Class 1000 Microelectronics Fabrication Clean Room
Department of Electrical and Computer Engineering

Cameron Hall  Room 201
The University of North Carolina at Charlotte
William States Lee College of Engineering


The ECE microelectronics fabrication laboratory has 3000 square feet of class 1000 clean room space. This laboratory includes all of the necessary facilities to fabricate complex devices and integrated circuits. A recirculating deionized water system supplies the lab with high purity water. Purge and process gases are plumbed throughout the lab. Complete chemical cleaning and etching capabilities are included.


The fabrication laboratory includes 8 high temperature furnaces manufactured by Corso-Gray, Thermco, and Lindberg. These furnaces are used for high purity silicon oxidations, n and p type doping and diffusion, and high temperature anneals.


The lab has complete photolithography capability including wafer spin coating, direct contact mask exposure with a HTG contact mask aligner, and developing facilities. Etching is accomplished with either wet chemical etching or plasma techniques using a Technics Micro-Plasma series 900 plasma system, Texas Instruments A-24-D PECVD tool, or an IBM designed reactive ion etch tool. Metal thin films can be vacuum deposited with a Cooke thermal evaporator, Cooke e-beam evaporator, Varian 3125 4 pocket e-beam evaporator, a CHA Mark 50 four pocket e-beam evaporator, or a CVC AST-601 3 target sputtering tool. The lab includes various inspection microscopes and measurement tools including a Nanometrics Nanopsec AFT 200 automatic thickness tool, Tencor Alpha Step 200 surface profiler, and a Westbond gold wire ball bonder is also available. A Micromanipulator probe station with Tektronix 576 curve tracer and a HP Parametric Tester is available for electrical measurements.

Three MBE (molecular beam epitaxy) systems are used for advanced materials research. The MBE systems are pumped be either cryogenic or turbomolecular high vacuum pumps and have various deposition sources for individual or co-deposition operations. III-V, II-IV, SiC, and Diamond like carbon materials are currently under investigation.