**Dr. Yong Zhang, ****Bissell Distinguished Professor**

**Electrical and Computer Engineering Department**

**Optoelectronics Center**

**Energy Production and Infrastructure Center (EPIC)**

**Adjunct Professor, Department of Physics and Optical Science**

**The University of North Carolina at Charlotte, Charlotte, NC 28223**

**Phone: (704) 687-8652, Email: Yong.Zhang@uncc.edu**

** **

**Research Interest**

- Emerging and future generation materials and device architectures for energy and related applications (photovoltaics, solid-state-lighting, detector)
- Fundamental sciences in solid state physics and electrical engineering
- Optical spectroscopy and material growth
- Large scale first-principles and empirical electronic structure modeling
- Materials of interest: nanostructures, semiconductor superlattices and alloys, inorganic-organic hybrids

**Professional Preparation***:*

Xiamen (Amoy) University, China, Physics, B.S., 1982

Xiamen (Amoy) University, China, Physics, M.S., 1985

Dartmouth College, Physics, Ph.D., 1994

**Appointments***:*

- Bissell Distinguished Professor, Electrical and Computer Engineering Department, UNC-Charlotte, 4/2009 – present. Faculty members for Optical Science and Engineering program and Nanoscale Science Ph.D. Program at UNC-Charlotte.
- Senior Scientist II, Materials and Computational Science Center, NREL, 2006 – 2009.
- Senior Scientist I, Center for Basic Sciences, NREL, 1997 – 2005.
- Postdoc, Center for Basic Sciences, NREL, 1994 – 1997.
- Visiting Researcher, Physics Department, Dartmouth College, 1/1989 – 1/1990.
- Researcher, Physics Department, Xiamen (Amoy) University, China, 1987 – 1989.
- Engineer, Xiamen United Development Co. Ltd., Xiamen, China, 1985 – 1987.

**Other positions:**

a) Guest Professor, Institute of Semiconductors, Chinese Academy of Sciences

b) Guest Professor, School of Physics and Engineering, Xiamen University

c) “Chaires d’excellence” Invited Professor of Nanosciences Foundation (France), NPSC team of CEA-CNRS-UJF, Grenoble, 2010-2012.

d) Academic Committee member, State Key Laboratory of Photovoltaic Science and Technology, Changzhou, China.

** **

**Selected Recent Publications (Full List)**

- X. Wang, R. Yang,
**Y. Zhang**, P. Zhang, and Y. Xue,*Rare earth chalcogenide Ce3Te4 as high efficiency high temperature thermoelectric material*,**Appl. Phys. Lett.**98, 222110 (2011). **Y. Zhang**and L. W. Wang,*Global electronic structure of semiconductor alloys through direct large-scale computations for III-V alloys Ga*,_{x}In_{1−x}P**Phys. Rev. B**83, 165208 (2011).- Z. M. Wu,
**Y. Zhang**, J. J. Zheng, X. G. Lin, X. H. Chen, B. W. Huang, H. Q. Wang, K. Huang, S. P. Li,� and J. Y. Kang,*An all-inorganic type-II heterojunction array with nearly full solar spectral response based on ZnO/ZnSe core/shell nanowires*,**J. Mater. Chem.**21, 6020 (2011). - K. Wang, J.-J Chen, Z. Zeng, J. Tarr, W.-L. Zhou
**,****Y.****Zhang,**Y.-F Yan, C.-S Jiang, J. Pern, and A. Mascarenhas,*Synthesis and Photovoltaic Effect of Vertically Aligned ZnO/ZnS Core/Shell**Nanowire Arrays*,**Appl. Phys. Lett.**96, 123105 (2010). **Y. Zhang**and R. Tsu,*Binding graphene sheets together using Silicon � Graphene/Silicon superlattice*,**Nanoscale****Research Letters**5, 805(2010).**Y****. Zhang**, A. Mascarenhas, S.-H. Wei, and L.-W. Wang,*Comparison of atomistic simulations and statistical theories for variable degree of long-range order in semiconductor alloys*,**Phys. Rev. B**80, 045206 (2009). �- X. F. Lu, D.A. Beaton, R.B. Lewis, T. Tiedje, and
**Y. Zhang**,*Composition Dependence of Photoluminescence of GaAs*,_{1-x}Bi_{x}Alloys**Appl. Phys. Lett.****95****,**041903 (2009). - Y. Xue,
**Y. Zhang**, and P.-H. Zhang,*Theory of the color change of Na*,_{x}WO_{3}as a function of Na-charge doping**Phys. Rev. B**79, 205113 (2009). **Y. Zhang**, C.-S. Jiang, D. J. Friedman, J. F. Geisz, and A. Mascarenhas,*Tailoring the electronic properties of Ga*,_{x}In_{1-x}P beyond simply varying alloy composition**Appl. Phys. Lett.**94, 091113 (2009).**Y. Zhang**, S.-H. Lee, A. Mascarenhas, and S. K. Deb,*UV photochromic memory effect in proton-based WO*,_{3}electrochromic devices**Appl. Phys. Lett.**93, 203508 (2008).**Y. Zhang**, A. Mascarenhas, and L.-W. Wang,*Interplay of alloying and ordering on the electronic structure of Ga*,_{x}In_{1-x}P alloys**Phys. Reb. B**78, 235202 (2008).**Y. Zhang**, A. Mascarenhas, and L.-W. Wang,*Non-Bloch nature of alloy states in a conventional semiconductor alloy: Ga*,_{x}In_{1-x}P as an example**Phys. Rev. Lett.**101, 036403- K. Wang, J.-J. Chen, W.-L. Zhou,
**Y. Zhang**, Y.-F. Yan, J. Pern, and A. Mascarenhas,*Direct growth of highly mismatched type II ZnO/ZnSe core/shell nanowire arrays on transparent conducting oxide substrates for solar cell applications*,**Adv. Mat.**20, 3248 (2008). - A. Franceschetti and
**Y. Zhang**,*Multiexciton**absorption and multiple exciton generation in CdSe quantum Dots*,**Phys. Rev. Lett.**100**,**136805 (2008). **Y. Zhang**, Z. Islam, Y. Ren, P. Parilla, S. P. Ahrenkiel, P. L. Lee, A. Mascarenhas,M. J. McNevin, I. Naumov, H.-X. Fu, X.-Y. Huang, and J. Li,*Zero thermal expansion in a nanostructured inorganic-organic hybrid crystal*,**Phys. Rev. Lett.**� 99, 215901**Y. Zhang**, L.-W. Wang, and A.� Mascarenhas,*�Quantum coaxial cables� for solar energy harvesting*,**Nano. Lett.**7, 1264 (2007).**Y. Zhang**, A. Mascarenhas, and L.-W. Wang,*Systematic approach to distinguishing a perturbed host state from an impurity state in a supercell calculation for a doped semiconductor: using GaP:N as an example*,**Phys. Rev. B****(Rapid Commun.)**74, 41201(R) (2006).- C.-Y. Moon, G. M. Dalpian,
**Y. Zhang**, S.-H. Wei, X.-Y. Huang, and J. Li,*Study of phase selectivity of organic-inorganic hybrid semiconductors*,**Chem. Mater.**� 18, 2805 (2006). **Y. Zhang**, G. M. Dalpian, B. Fluegel, S.-H Wei, A. Mascarenhas, X.-Y. Huang, J. Li, and L.-W. Wang,*Novel approach to tuning physical properties of organic-inorganic hybrid semiconductors*,**Phys. Rev. Lett.**96, 026405(2006).- Fluegel,
**Y.****Zhang**, J. F. Geisz, and A. Mascarenhas,*Confirmation of the impurity-band model for GaP*_{1-x}N_{x},**Phys. Rev. B****�**72, 073203 (2005). **Y. Zhang,**A. Mascarenhas, and L.W. Wang,*III-V-Bi versus III-V-N: similar and dissimilar aspects*, Phys. Rev. B 71, 155201 (2005).- S. Smith,
**Y. Zhang**, A. Mascarenhas, and M. Hanna,*Effect of localization on excitonic linewidth in partially-ordered GaInP*,_{2}**Phys. Rev. B**70, 235301 (2004). - Fluegel,
**Y. Zhang**, A. Mascarenhas, X. Huang, and J. Li,*Electronic properties of hybrid organic-inorganic semiconductors*,**Phys. Rev. B**70, 205308 (2004). **Y. Zhang**and*Effects due to and derived from spontaneous ordering in III-V semiconductors*,**Mat. Res. Soc. Symp. Proc.**794, 279-290 (2004).**Y. Zhang,**B. Fluegel, and A. Mascarenhas,*Total and negative refraction in real crystals for ballistic electrons and light*,**Phys. Rev. Lett.**91, 157404 (2003).- J. H. Li, S. C. Moss,
**Y. Zhang**, A. Mascarenhas, L. N. Pfeiffer, K. W. West, W. K. Ge, and J. Bai,*Layer ordering and faulting in (GaAs)*,_{n}/(AlAs)_{n}ultra-short-period superlattices**Phys. Rev. Lett.**91, 106103 (2003). **Y. Zhang**, B. Fluegel, M. C. Hanna, A. Mascarenhas, L.-W. Wang, Y. J. Wang, and X. Wei,*Impurity perturbation to the host band structure and recoil of the impurity state*,**Phys. Rev. B**68, 75210 (2003).- X.-Y. Huang, J. Li,
**Y. Zhang**, and A. Mascarenhas,*From 1D Chain to 3D Network: Syntheses, Structures, and Optical Properties of Novel Hybrid II-VI Nanocomposites*,**J. Am. Chem. Soc.**125, 7049 (2003). - Zh. Karazhanov,
**Y. Zhang**, L.-W. Wang, A. Mascarenhas, and S. Deb,*Resonant defect states and strong lattice relaxation of oxygen vacancies in WO*,_{3}**Phys. Rev. B**68, 233204 (2003). - Y.J. Wang, X. Wei,
**Y.****Zhang**, A. Mascarenhas, H. P. Xin, Y. G. Hong, and C. W. Tu,*Evolution of the electron localization in a non-conventional alloy system GaAs*,_{1-x}N_{x}probed by high magnetic field photoluminescence**Appl. Phys. Lett.**82, 4453 (2003). - B. Fluegel, S. Smith,
**Y. Zhang**, A. Mascarenhas, J. F. Geisz, and J. M. Olson, Resonant excitation study of ultrasharp emission lines in ordered Ga_{x}In_{1-x}P,**Phys. Rev. B**115320 (2002). **Y. Zhang**, A. Mascarenhas, and L.-W. Wang,*Band alignment between GaAs and partially ordered GaInP,***Appl. Phys. Lett.**80, 3111 (2002).- A. Mascarenhas,
**Y. Zhang**, J. Verley, and M. J. Seong,*Overcoming limitations in semiconductor alloy design*,**Superlattices and microstructures**29, 395 (2001). **Y. Zhang**and A. Mascarenhas, Effects of the orientational superlattice on the electronic and vibrational properties of CuPt ordered GaInP alloys,**J. Raman Spectrosc.**32, 831 (2001).**Y. Zhang**, A. Mascarenhas, and L.-W. Wang,*Statistical aspects of electronic and structural properties in partially ordered semiconductor alloys,***Phys. Rev. B**64, 125207 (2001).**Y. Zhang**, A. Mascarenhas, and L.-W. Wang,*Dependence of the band structure on the order parameter for partially ordered Ga*_{x}In_{1-x}P alloy,**Phys. Rev. B****(Rapid Commun.)**63, R201312 (2001).**Y. Zhang**, A. Mascarenhas, H. P. Xin, and C. W. Tu,*Scaling Of Band Gap Reduction In Heavily Nitrogen Doped GaAs*,**Phys. Rev. B (Rapid Commun.)**63, 161303 (R) (2001).**Y. Zhang**, A. Mascarenhas, J. F. Geisz, H. P. Xin, and C. W. Tu,*Discrete and continuous spectrum of nitrogen induced bound states in heavily doped GaAs:N*,**Phys. Rev. B**63, 85205 (2001).- S. Francoeur,
**Y. Zhang**,*Optical properties of spontaneous lateral composition modulation in AlAs/InAs short-period superlattices*,**Appl. Phys. Lett.**77, 1765 (2000). **Y. Zhang**, B. Fluegel, A. Mascarenhas, H. P. Xin, and C. W. Tu,*Optical transitions in isoelectronically doped semiconductor GaP:N: an evolution from isolated centers, pairs, clusters to an impurity band,***Phys. Rev. B**62, 4493 (2000).**Y. Zhang**and A. Mascarenhas,*Isoelectronic impurity states in GaAs:N*, Phys. Rev. B 61, 15562 (2000).- H. M. Cheong,
**Y. Zhang**, A. Mascarenhas, and J. F. Geisz,*Observation of nitrogen-induced levels in GaAs*,_{1-x}N_{x}using resonant Raman studies**Phys. Rev. B**61, 13687 (2000). - M. Kozhevnikov, V. Narayanamurti, C. V. Reddy, H. P. Xin, C. W. Tu, A. Mascarenhas, and
**Y. Zhang,***Evolution of GaAs*,_{1-x}N_{x}conduction states and giant Au/GaAs_{1-x}N_{x}Schottky barrier reduction studied by ballistic electron emission microscopy**Phys. Rev. B****(Rapid Commun.)**61, R7861 (2000). - H. P. Xin, C. W. Tu,
**Y. Zhang**, and A. Mascarenhas,*Effects of nitrogen on the band structure of GaN*,_{x}P_{1-x}alloys**Appl. Phys. Lett.**76, 1267 (2000). **Y. Zhang**, A. Mascarenhas, S. Smith, J. F. Geisz, J.M. Olson, and M. Hanna,*Effects of spontaneous ordering and alloy statistical fluctuations on exciton linewidth in Ga*,_{x}In_{1-x}P alloys**Phys. Rev. B**61, 9910 (2000).**Y. Zhang**, A. Mascarenhas, H. P. Xin, and C. W. Tu,*Formation of an impurity band and its quantum confinement in heavily doped GaAs:N*,**Phys. Rev. B**61, 7479 (2000).**Y. Zhang**, A. Mascarenhas, H. P. Xin, and C. W. Tu,*Valence-band splitting and shear deformation potential of dilute GaAs*,_{1-x}N_{x}alloys**Phys. Rev. B**61, 4433 (2000).- M. Kozhevnikov and V. Narayanamurti, A. Mascarenhas,
**Y. Zhang**, and J. M. Olson,*Ordering-induced band structure effects in GaInP*,_{2}studied by ballistic electron emission microscopy**Appl. Phys. Lett.**75, 1128 (1999). - H.M. Cheong,
**Y. Zhang**, A. Norman, J. D. Perkins, A. Mascarenhas, K.Y. Cheng, and K.C. Hsieh,*Resonant Raman scattering studies of composition-modulated GaP/InP short-period superlattices*,**Phys. Rev. B**60, 4883 (1999). - B. Fluegel,
**Y. Zhang**, A. Mascarenhas, J. F. Geisz, J. M. Olson, and A. Duda,*Crystal anisotropy and spin-polarized photoluminescence of ordered Ga*, Phys. Rev. B 60, R11261 (1999)._{x}In_{1-x}P - J. D. Perkins, A. Mascarenhas,
**Y.****Zhang**, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz,*Nitrogen-activated transitions, level repulsion, and band gap reduction in GaAs*,_{1-x}N_{x}with x < 0.03**Phys. Rev. Lett.**82, 3312 (1999). - �
**Y. Zhang**and A. Mascarenhas,*Scaling of Exciton binding energy and Virial theorem in semiconductor quantum wells and wires*,**Phys. Rev. B**59, 2040 (1999).