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Dr. Yong Zhang, Bissell Distinguished Professor

Electrical and Computer Engineering Department

Optoelectronics Center

Energy Production and Infrastructure Center (EPIC)

Adjunct Professor, Department of Physics and Optical Science

The University of North Carolina at Charlotte, Charlotte, NC 28223

Phone: (704) 687-8652, Email: Yong.Zhang@uncc.edu

 

Research Interest

  • Emerging and future generation materials and device architectures for energy and related applications (photovoltaics, solid-state-lighting, detector)
  • Fundamental sciences in solid state physics and electrical engineering
  • Optical spectroscopy and material growth
  • Large scale first-principles and empirical electronic structure modeling
  •  Materials of interest: nanostructures, semiconductor superlattices and alloys, inorganic-organic hybrids

 

Professional Preparation:

Xiamen (Amoy) University, China, Physics, B.S., 1982

Xiamen (Amoy) University, China, Physics, M.S., 1985

Dartmouth College, Physics, Ph.D., 1994

 

Appointments:

  • Bissell Distinguished Professor, Electrical and Computer Engineering Department, UNC-Charlotte, 4/2009 – present. Faculty members for Optical Science and Engineering program and Nanoscale Science Ph.D. Program at UNC-Charlotte.
  • Senior Scientist II, Materials and Computational Science Center, NREL, 2006 – 2009.
  • Senior Scientist I, Center for Basic Sciences, NREL, 1997 – 2005.
  • Postdoc, Center for Basic Sciences, NREL, 1994 – 1997.
  • Visiting Researcher, Physics Department, Dartmouth College, 1/1989 – 1/1990.
  • Researcher, Physics Department, Xiamen (Amoy) University, China, 1987 – 1989.
  • Engineer, Xiamen United Development Co. Ltd., Xiamen, China, 1985 – 1987.

 

Other positions:

a)      Guest Professor, Institute of Semiconductors, Chinese Academy of Sciences

b)      Guest Professor, School of Physics and Engineering, Xiamen University

c)       “Chaires d’excellence” Invited Professor of Nanosciences Foundation (France), NPSC team of CEA-CNRS-UJF, Grenoble, 2010-2012.

d)      Academic Committee member, State Key Laboratory of Photovoltaic Science and Technology, Changzhou, China.

 

Selected Recent Publications (Full List)

  1. X. Wang, R. Yang, Y. Zhang, P. Zhang, and Y. Xue, Rare earth chalcogenide Ce3Te4 as high efficiency high temperature thermoelectric material, Appl. Phys. Lett. 98, 222110 (2011).
  2. Y. Zhang and L. W. Wang, Global electronic structure of semiconductor alloys through direct large-scale computations for III-V alloys GaxIn1−xP, Phys. Rev. B 83, 165208 (2011).
  3. Z. M. Wu, Y. Zhang, J. J. Zheng, X. G. Lin, X. H. Chen, B. W. Huang, H. Q. Wang, K. Huang, S. P. Li,� and J. Y. Kang, An all-inorganic type-II heterojunction array with nearly full solar spectral response based on ZnO/ZnSe core/shell nanowires, J. Mater. Chem. 21, 6020 (2011).
  4. K. Wang, J.-J Chen, Z. Zeng, J. Tarr, W.-L. Zhou, Y. Zhang, Y.-F Yan, C.-S Jiang, J. Pern, and A. Mascarenhas, Synthesis and Photovoltaic Effect of Vertically Aligned ZnO/ZnS Core/Shell Nanowire Arrays, Appl. Phys. Lett. 96, 123105 (2010).
  5. Y. Zhang and R. Tsu, Binding graphene sheets together using Silicon � Graphene/Silicon superlattice, Nanoscale Research Letters 5, 805(2010).
  6. Y. Zhang, A. Mascarenhas, S.-H. Wei, and L.-W. Wang, Comparison of atomistic simulations and statistical theories for variable degree of long-range order in semiconductor alloys, Phys. Rev. B 80, 045206 (2009). �
  7. X. F. Lu, D.A. Beaton, R.B. Lewis, T. Tiedje, and Y. Zhang, Composition Dependence of Photoluminescence of GaAs1-xBix Alloys, Appl. Phys. Lett. 95, 041903 (2009).
  8. Y. Xue, Y. Zhang, and P.-H. Zhang, Theory of the color change of NaxWO3 as a function of Na-charge doping, Phys. Rev. B 79, 205113 (2009).
  9. Y. Zhang, C.-S. Jiang, D. J. Friedman, J. F. Geisz, and A. Mascarenhas, Tailoring the electronic properties of GaxIn1-xP beyond simply varying alloy composition, Appl. Phys. Lett. 94, 091113 (2009).
  10. Y. Zhang, S.-H. Lee, A. Mascarenhas, and S. K. Deb, UV photochromic memory effect in proton-based WO3 electrochromic devices, Appl. Phys. Lett. 93, 203508 (2008).
  11. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Interplay of alloying and ordering on the electronic structure of GaxIn1-xP alloys, Phys. Reb. B 78, 235202 (2008).
  12. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Non-Bloch nature of alloy states in a conventional semiconductor alloy: GaxIn1-xP as an example, Phys. Rev. Lett. 101, 036403 (2008).
  13. K. Wang, J.-J. Chen, W.-L. Zhou, Y. Zhang, Y.-F. Yan, J. Pern, and A. Mascarenhas, Direct growth of highly mismatched type II ZnO/ZnSe core/shell nanowire arrays on transparent conducting oxide substrates for solar cell applications, Adv. Mat. 20, 3248 (2008).
  14. A. Franceschetti and Y. Zhang, Multiexciton absorption and multiple exciton generation in CdSe quantum Dots, Phys. Rev. Lett. 100, 136805 (2008).
  15. Y. Zhang, Z. Islam, Y. Ren, P. Parilla, S. P. Ahrenkiel, P. L. Lee, A. Mascarenhas,M. J. McNevin, I. Naumov, H.-X. Fu, X.-Y. Huang, and J. Li, Zero thermal expansion in a nanostructured inorganic-organic hybrid crystal, Phys. Rev. Lett.� 99, 215901 (2007).
  16. Y. Zhang, L.-W. Wang, and A.� Mascarenhas, �Quantum coaxial cables� for solar energy harvesting, Nano. Lett. 7, 1264 (2007).
  17. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Systematic approach to distinguishing a perturbed host state from an impurity state in a supercell calculation for a doped semiconductor: using GaP:N as an example, Phys. Rev. B (Rapid Commun.) 74, 41201(R) (2006).
  18. C.-Y. Moon, G. M. Dalpian, Y. Zhang, S.-H. Wei, X.-Y. Huang, and J. Li, Study of phase selectivity of organic-inorganic hybrid semiconductors, Chem. Mater.� 18, 2805 (2006).
  19. Y. Zhang, G. M. Dalpian, B. Fluegel, S.-H Wei, A. Mascarenhas, X.-Y. Huang, J. Li, and L.-W. Wang, Novel approach to tuning physical properties of organic-inorganic hybrid semiconductors, Phys. Rev. Lett. 96, 026405(2006).
  20. Fluegel, Y. Zhang, J. F. Geisz, and A. Mascarenhas, Confirmation of the impurity-band model for GaP1-xNx, Phys. Rev. B 72, 073203 (2005).
  21. Y. Zhang, A. Mascarenhas, and L.W. Wang, III-V-Bi versus III-V-N: similar and dissimilar aspects, Phys. Rev. B 71, 155201 (2005).
  22. S. Smith, Y. Zhang, A. Mascarenhas, and M. Hanna, Effect of localization on excitonic linewidth in partially-ordered GaInP2, Phys. Rev. B 70, 235301 (2004).
  23. Fluegel, Y. Zhang, A. Mascarenhas, X. Huang, and J. Li, Electronic properties of hybrid organic-inorganic semiconductors, Phys. Rev. B 70, 205308 (2004).
  24. Y. Zhang and A. Mascarenhas, Effects due to and derived from spontaneous ordering in III-V semiconductors, Mat. Res. Soc. Symp. Proc. 794, 279-290 (2004).
  25. Y. Zhang, B. Fluegel, and A. Mascarenhas, Total and negative refraction in real crystals for ballistic electrons and light, Phys. Rev. Lett. 91, 157404 (2003).
  26. J. H. Li, S. C. Moss, Y. Zhang, A. Mascarenhas, L. N. Pfeiffer, K. W. West, W. K. Ge, and J. Bai, Layer ordering and faulting in (GaAs)n/(AlAs)n ultra-short-period superlattices, Phys. Rev. Lett. 91, 106103 (2003).
  27. Y. Zhang, B. Fluegel, M. C. Hanna, A. Mascarenhas, L.-W. Wang, Y. J. Wang, and X. Wei, Impurity perturbation to the host band structure and recoil of the impurity state, Phys. Rev. B 68, 75210 (2003).
  28. X.-Y. Huang, J. Li, Y. Zhang, and A. Mascarenhas, From 1D Chain to 3D Network: Syntheses, Structures, and Optical Properties of Novel Hybrid II-VI Nanocomposites, J. Am. Chem. Soc. 125, 7049 (2003).
  29. Zh. Karazhanov, Y. Zhang, L.-W. Wang, A. Mascarenhas, and S. Deb, Resonant defect states and strong lattice relaxation of oxygen vacancies in WO3, Phys. Rev. B 68, 233204 (2003).
  30. Y.J. Wang, X. Wei, Y. Zhang, A. Mascarenhas, H. P. Xin, Y. G. Hong, and C. W. Tu, Evolution of the electron localization in a non-conventional alloy system GaAs1-xNx probed by high magnetic field photoluminescence, Appl. Phys. Lett. 82, 4453 (2003).
  31. B. Fluegel, S. Smith, Y. Zhang, A. Mascarenhas, J. F. Geisz, and J. M. Olson, Resonant excitation study of ultrasharp emission lines in ordered GaxIn1-xP, Phys. Rev. B 115320 (2002).
  32. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Band alignment between GaAs and partially ordered GaInP, Appl. Phys. Lett. 80, 3111 (2002).
  33. A. Mascarenhas, Y. Zhang, J. Verley, and M. J. Seong, Overcoming limitations in semiconductor alloy design, Superlattices and microstructures 29, 395 (2001).
  34. Y. Zhang and A. Mascarenhas, Effects of the orientational superlattice on the electronic and vibrational properties of CuPt ordered GaInP alloys, J. Raman Spectrosc. 32, 831 (2001).
  35. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Statistical aspects of electronic and structural properties in partially ordered semiconductor alloys, Phys. Rev. B 64, 125207 (2001).
  36. Y. Zhang, A. Mascarenhas, and L.-W. Wang, Dependence of the band structure on the order parameter for partially ordered GaxIn1-xP alloy, Phys. Rev. B (Rapid Commun.) 63, R201312 (2001).
  37. Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Scaling Of Band Gap Reduction In Heavily Nitrogen Doped GaAs, Phys. Rev. B (Rapid Commun.) 63, 161303 (R) (2001).
  38. Y. Zhang, A. Mascarenhas, J. F. Geisz, H. P. Xin, and C. W. Tu, Discrete and continuous spectrum of nitrogen induced bound states in heavily doped GaAs:N, Phys. Rev. B 63, 85205 (2001).
  39. S. Francoeur, Y. Zhang, A. G. Norman, F. Alsina, A. Mascarenhas, J. L. Reno, E. D. Jones, S. R. Lee, and D. M. Follstaedt, Optical properties of spontaneous lateral composition modulation in AlAs/InAs short-period superlattices, Appl. Phys. Lett. 77, 1765 (2000).
  40. Y. Zhang, B. Fluegel, A. Mascarenhas, H. P. Xin, and C. W. Tu, Optical transitions in isoelectronically doped semiconductor GaP:N: an evolution from isolated centers, pairs, clusters to an impurity band, Phys. Rev. B 62, 4493 (2000).
  41. Y. Zhang and A. Mascarenhas, Isoelectronic impurity states in GaAs:N, Phys. Rev. B 61, 15562 (2000).
  42. H. M. Cheong, Y. Zhang, A. Mascarenhas, and J. F. Geisz, Observation of nitrogen-induced levels in GaAs1-xNx using resonant Raman studies, Phys. Rev. B 61, 13687 (2000).
  43. M. Kozhevnikov, V. Narayanamurti, C. V. Reddy, H. P. Xin, C. W. Tu, A. Mascarenhas, and Y. Zhang, Evolution of GaAs1-xNx conduction states and giant Au/GaAs1-xNx Schottky barrier reduction studied by ballistic electron emission microscopy, Phys. Rev. B (Rapid Commun.) 61, R7861 (2000).
  44. H. P. Xin, C. W. Tu, Y. Zhang, and A. Mascarenhas, Effects of nitrogen on the band structure of GaNxP1-x alloys, Appl. Phys. Lett. 76, 1267 (2000).
  45. Y. Zhang, A. Mascarenhas, S. Smith, J. F. Geisz, J.M. Olson, and M. Hanna, Effects of spontaneous ordering and alloy statistical fluctuations on exciton linewidth in GaxIn1-xP alloys, Phys. Rev. B 61, 9910 (2000).
  46. Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Formation of an impurity band and its quantum confinement in heavily doped GaAs:N, Phys. Rev. B 61, 7479 (2000).
  47. Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Valence-band splitting and shear deformation potential of dilute GaAs1-xNx alloys, Phys. Rev. B 61, 4433 (2000).
  48. M. Kozhevnikov and V. Narayanamurti, A. Mascarenhas, Y. Zhang, and J. M. Olson, Ordering-induced band structure effects in GaInP2 studied by ballistic electron emission microscopy, Appl. Phys. Lett. 75, 1128 (1999).
  49. H.M. Cheong, Y. Zhang, A. Norman, J. D. Perkins, A. Mascarenhas, K.Y. Cheng, and K.C. Hsieh, Resonant Raman scattering studies of composition-modulated GaP/InP short-period superlattices, Phys. Rev. B 60, 4883 (1999).
  50. B. Fluegel, Y. Zhang, A. Mascarenhas, J. F. Geisz, J. M. Olson, and A. Duda, Crystal anisotropy and spin-polarized photoluminescence of ordered GaxIn1-xP, Phys. Rev. B 60, R11261 (1999).
  51. J. D. Perkins, A. Mascarenhas, Y. Zhang, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Nitrogen-activated transitions, level repulsion, and band gap reduction in GaAs1-xNx with x < 0.03, Phys. Rev. Lett. 82, 3312 (1999).
  52. Y. Zhang and A. Mascarenhas, Scaling of Exciton binding energy and Virial theorem in semiconductor quantum wells and wires, Phys. Rev. B 59, 2040 (1999).